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(R) BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 1 2 s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-220 DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value BDX53F BDX54F 160 160 5 8 12 0.2 60 -65 to 150 150 V V V A A A W o o Unit C C For PNP types voltage and current values are negative. October 2003 1/4 BDX53F / BDX54F THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CB = 160 V V EB = 5 V I C = 50 mA 160 Min. Typ. Max. 0.5 0.2 5 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE VF h fe Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain IC = 2 A IC = 2 A IC = 2 A IC = 3 A I B =10 mA I B =10 mA V CE = 5 V V CE = 5 V 500 150 2 2.5 V V Parallel Diode Forward I F = 2 A Voltage Small Signal Current Gain I C = 0.5 A f = 1MHz V CE = 2 V 20 2.5 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 BDX53F / BDX54F TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 3/4 BDX53F / BDX54F Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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